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SORAA Gallium Nitride (GaN) Technology


Breakthrough proprietary native-substrate LED technology

  • 1000x fewer defects than other LEDs
  • 10x higher current density with little droop
  • 10x more light output per unit of LED area
  • Smallest, brightest LED light sources
  • High temperature tolerance

10x Higher Output

The main advantage of Soraa’s GaN on GaN (Gallium Nitride on Gallium Nitride) LED material is that it allows reliable operation at very high current densities. It has 1000x fewer defects than conventional LEDs, which have GaN layers on cheaper foreign substrates like sapphire, silicon carbide, or silicon. This enbles Soraa LEDs to emit 10x more light per unit area of LED material than conventional LEDs. GaN on GaN’s optical transparency and high thermal and electrical conductivity also enable a very robust, simple LED design that delivers maximum light output and performance.

Highest Operating Temperature

Soraa’s GaN on GaN LEDs can tolerate much higher temperatures than first generation LEDs. This, in turn, enables a simple and elegant lamp design – no fan, only a heatsink – that produces light output equivalent to the brightest halogen lamp and operates reliably at lamp temperatures of up to 120°C, a requirement for use in the most constrained fixtures.

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